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74LVX00
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE
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HIGH SPEED: tPD = 4.1 ns (TYP.) at VCC = 3.3V INPUT VOLTAGE LEVEL: VIL = 0.8V, VIH = 2V at VCC = 3V LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.3 V (TYP.) at VCC = 3.3V SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 00 IMPROVED LATCH-UP IMMUNITY
M (Micro Package)
T (TSSOP Package)
ORDER CODES : 74LVX00M 74LVX00T including buffer output, which enable high noise immunity and stable output. It has better speed performance at 3.3V than 5V LS-TTL family combined with the true CMOS low power consumption. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
DESCRIPTION The 74LVX00 is a low voltage CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 1999
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74LVX00
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCT ION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L L H H B L H L H Y H H H L
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to 7.0 -0.5 to VCC + 0.5 - 20 20 25 50 -65 to +150 300 Unit V V V mA mA mA mA
o o
ICC or IGND DC VCC or Ground Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top dt/dv Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (VCC = 3V) (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 3.6 0 to 5.5 0 to VCC -40 to +85 0 to 100 Unit V V V
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C
ns/V
1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V
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74LVX00
DC SPECIFICATIONS
Symb ol Parameter V CC (V) VIH High Level Input Voltage 2.0 3.0 3.6 VIL Low Level Input Voltage 2.0 3.0 3.6 VOH High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current 2.0 3.0 3.0 VOL 2.0 3.0 3.0 II ICC 3.6 3.6 VI = V IH or V IL VI(*) = VIH
(* )
Test Co nditions Min. 1.5 2.0 2.4 T yp.
Valu e T A = 25 oC Max. -40 to 85 o C Min. 1.5 2.0 2.4 0.5 0.8 0.8 0.5 0.8 0.8 1.9 2.9 2.48 0.0 0.0 0.1 0.1 0.36 0.1 2 0.1 0.1 0.44 1 20 Max.
Un it
V
V
I O =-50 A IO=-50 A IO=-4 mA IO=50 A IO=50 A IO=4 mA
1.9 2.9 2.58
2.0 3.0
V
V A A
VI = 5V or GND VI = VCC or GND
(*) All outputs loaded.
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol Parameter V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 3.3 -0.5 3.3 3.3 C L = 50 pF 0.8 Test Co nditions
o
Valu e T A = 25 C Min. T yp. 0.3 -0.3 2 Max. 0.5 -40 to 85 C Min. Max.
o
Un it
V
1) Worst case package 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND 3) max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD). f=1MHz
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74LVX00
AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns)
Symb ol Parameter V CC (V) tPLH tPHL Propagation Delay Time 2.7 2.7 3.3(*) 3.3(*) 2.7 3.3(*) T est Con ditio n CL (pF) 15 50 15 50 50 50 Valu e T A = 25 oC -40 to Min. T yp. Max. Min. 5.4 10.1 1.0 7.9 13.6 1.0 4.1 6.6 6.2 9.7 1.5 1.5 1.0 1.0 Un it 85 o C Max. 12.5 16.0 7.5 11.0 1.5 1.5
ns
tOSLH tOSHL
Output to Output Skew Time (note 1, 2)
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW 2) Parameter guaranteed by design (*) Voltage range is 3.3V 0.3V
CAPACITIVE CHARACTERISTICS
Symb ol Parameter V CC (V) C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) 3.3 3.3 Test Co nditions Min. T yp. 4 19 Valu e T A = 25 oC Max. 10 -40 to 85 o C Min. Max. 10 pF pF Un it
1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD * VCC * fIN + ICC/4(per Gate)
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74LVX00
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74LVX00
SO-14 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
P013G
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74LVX00
TSSOP14 MECHANICAL DATA
mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176
DIM.
A
A2 A1 b e K c L E
D
E1
PIN 1 IDENTIFICATION
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